2026-06-26T15:45:42Zhttps://docta.ucm.es/rest/oai/requestoai:docta.ucm.es:20.500.14352/511172024-09-10T12:23:10Zcom_20.500.14352_14col_20.500.14352_15
Docta Complutense
author
Díaz-Guerra Viejo, Carlos
author
Piqueras De Noriega, Francisco Javier
author
Popa, V.
author
Cojocaru, A.
author
Tiginyanu, M.
2023-06-20T10:44:23Z
2023-06-20T10:44:23Z
2005-05-30
0003-6951
10.1063/1.1940734
https://hdl.handle.net/20.500.14352/51117
http://dx.doi.org/10.1063/1.1940734
http://scitation.aip.org
The emission properties of GaN nanostructures created by photoelectrochemical etching have been investigated by cathodoluminescence (CL) in the scanning electron microscope. Columnar structures with diameters of 150-250 nm formed near the surface of the as-grown GaN layers branch into nanowires with diameters of 20-60 nm, while islands with coral-like relief were observed at the bottom of the etched areas. CL emission of the observed nanostructures is dominated by free electron to acceptor transitions. Local CL spectra provide direct evidence of the existence of either compressive or tensile stress in different nanostructures. No free exciton luminescence was observed in GaN nanowires, supporting their relation to threading dislocations.
eng
Spatially resolved cathodoluminescence of GaN nanostructures fabricated by photoelectrochemical etching
journal article
URL
https://docta.ucm.es/bitstreams/31c84f36-37a6-4831-8954-4de6e8ce310b/download
File
MD5
463a094e0b9aebfc13618597fa376801
591586
application/pdf
PiquerasJ97libre.pdf
URL
https://docta.ucm.es/bitstreams/4eb6f58d-6b0b-422a-b2e6-0393b2eb7713/download
File
MD5
7a3f4cad157a05f6f8df744319c9629d
16800
text/plain
PiquerasJ97libre.pdf.txt