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oai:docta.ucm.es:20.500.14352/511282024-08-27T16:10:16Zcom_20.500.14352_14col_20.500.14352_15

Martil De La Plaza, Ignacio González Díaz, Germán Prado Millán, Álvaro Del San Andrés Serrano, Enrique 2023-06-20T10:44:40Z 2023-06-20T10:44:40Z 2003-08-15 0021-8979 10.1063/1.1592625 https://hdl.handle.net/20.500.14352/51128 http://dx.doi.org/10.1063/1.1592625 http://scitation.aip.org We present in this article a comprehensive study of rapid thermal annealing (RTA) effects on the physical properties of SiNx:H thin films deposited by the electron cyclotron resonance plasma method. Films of different as-deposited compositions (defined in this article as the nitrogen to silicon ratio, x=N/Si) were analyzed: from Si-rich (x=0.97) to N-rich (x=1.6) films. The evolution of the composition, bonding configuration, and paramagnetic defects with the annealing temperature are explained by means of different network bond reactions that take place depending on the as-deposited film composition. All the analyzed films release hydrogen, while Si-rich and near-stoichiometric (x=1.43) ones also lose nitrogen upon annealing. These films were used to make Al/SiNx:H/semiconductor devices with Si, In0.53Ga0.47As, and InP. After RTA treatments, the electrical properties of the three different SiNx:H/semiconductor interfaces can be explained, noting the microstructural modifications that SiNx:H experiences upon annealing. eng open access Rapid thermally annealed plasma deposited SiNx : H thin films: Application to metal-insulator-semiconductor structures with Si, In0.53Ga0.47As, and InP journal article