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oai:docta.ucm.es:20.500.14352/511322024-09-09T12:41:24Zcom_20.500.14352_14col_20.500.14352_15

Cathodoluminescence study of the radiative recombination properties of Se-doped GaSb crystals Díaz-Guerra Viejo, Carlos Vincent, J. Piqueras De Noriega, Francisco Javier Bermudez, V. Diéguez, E. © 2005 American Institute of Physics. This work has been carried out in the frame of the Fifth Framework European Programme for research, HPRN-CT 2001-00199 project. Support from MCYT through Project Nos. MAT2003-00455 and MAT2003-09873-C02-01 is also acknowledged.. The radiative recombination properties of Se-doped GaSb crystals grown by the Bridgman method have been investigated by cathodoluminescence (CL) microscopy and spectroscopy in the scanning electron microscope. A CL band centered at about 765 meV, not previously observed in undoped GaSb, is generally the dominant emission. CL spectra recorded under different excitation conditions suggest that this band can be attributed to a Se-related level-to-band transition. The spatial distribution of the 765 meV emission, as observed in the CL images, indicates an inhomogeneous Se distribution in the material. 2023-06-20T10:44:46Z 2023-06-20T10:44:46Z 2005-01-15 journal article 0021-8979 10.1063/1.1834727 https://hdl.handle.net/20.500.14352/51132 http://dx.doi.org/10.1063/1.1834727 http://scitation.aip.org eng HPRN-CT 2001-00199 MAT2003-00455 MAT2003-09873-C02-01 open access American Institute of Physics