2026-06-26T10:38:55Zhttps://docta.ucm.es/rest/oai/requestoai:docta.ucm.es:20.500.14352/511462024-09-09T18:11:33Zcom_20.500.14352_14col_20.500.14352_15
Docta Complutense
author
Urbieta Quiroga, Ana Irene
author
Fernández Sánchez, Paloma
author
Piqueras De Noriega, Francisco Javier
author
Vasco, E.
author
Zaldo, C.
2023-06-20T10:45:08Z
2023-06-20T10:45:08Z
2004-03
1454-4164
https://hdl.handle.net/20.500.14352/51146
Scanning tunnelling microscopy and spectroscopy have been used to characterize electrically active grain boundaries in pulsed laser deposited ZnO films with grain sizes in the range 216-500 nm. The p-type behaviour at the boundary is evidenced by local STM conductance spectra, which reveal boundaries with a n-p-i-p-n structure. in addition, local differential conductance measurements show higher surface band gap at the grain boundaries than in the grain interior, which is related to the space charge at the boundaries. The beam induced current mode of the STM has been used to image electrically active grain boundaries with a resolution of few nanometers in the different films. It is demonstrated that in some of the small grains the space charge region extends to the whole grain area so that no electrical barrier can be related to the grain boundary.
Nanoscopic study of ZnO films by electron beam induced current in the scanning tunneling microscope
journal article