2026-06-29T07:49:20Zhttps://docta.ucm.es/rest/oai/requestoai:docta.ucm.es:20.500.14352/513212023-08-28T19:19:39Zcom_20.500.14352_14col_20.500.14352_15
Inactivity windows in irradiated CMOS analog switches
Franco Peláez, Francisco Javier
Zong, Yi
Agapito Serrano, Juan Andrés
537.8
CMOS analogue integrated circuits
Field effect transistor switches
Radiation effects
Semiconductor device testing
CMOS analog switch
NMOS transistor irradiation
Inactivity windows
On-off state
Physical mechanism
Radiation testing
Total ionizing dose
Electron accelerators
Instruments
Ion accelerators
Ionizing radiation
Large Hadron Collider
Neutrons
Particle beams
Superconducting magnets
Switches
Testing
Analog switches
Complementary metal
Oxide semiconductor (CMOS) devices
Total ionizing dose (TID)
Electrónica (Física)
Radiactividad
(c) 2006 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works
Radiation tests have shown the existence of inactivity windows in analog switches. It means that the devices lose their ability to switch between ON and OFF states if the total radiation dose is placed between two characteristic values. Once the total radiation dose goes beyond the top value of the window, the switching ability reappears. A physical mechanism based on the evolution of the threshold voltage of irradiated NMOS transistors is proposed in this paper. Finally, consequences of inactivity windows in the conception of radiation tests are discussed.
Ministerio de Educación y Ciencia
CERN
Depto. de Estructura de la Materia, Física Térmica y Electrónica
Fac. de Ciencias Físicas
TRUE
pub
2023-06-20T10:50:32Z
2023-06-20T10:50:32Z
2006-08-28
journal article
https://hdl.handle.net/20.500.14352/51321
0018-9499
10.1109/TNS.2006.880474
eng
FPA2002-00912
K476/LHC
open access
application/pdf
IEEE-Inst Electrical Electronics Engineers Inc