2026-06-08T04:51:29Zhttps://docta.ucm.es/rest/oai/requestoai:docta.ucm.es:20.500.14352/513272023-08-26T10:23:38Zcom_20.500.14352_14col_20.500.14352_15
Degradation of instrumentation amplifiers due to the nonionizing energy loss damage
Franco Peláez, Francisco Javier
Lozano Rogado, Jesús
Santos Blanco, José Pedro
Agapito Serrano, Juan Andrés
537.8
Amplification
Instrumentation amplifiers
Junction gate field effect transistors
Neutron effects
Nuclear electronics
nuclear instrumentation
operational amplifiers
COTS
JFET input stage
displacement damage
frequency behavior
gain
high temperature influence
instrumentation amplifiers degradation
large frequency bandwidth
low CMRR
neutron radiation
neutron tolerance
nonionizing energy loss damage tests
offset voltage
output saturation voltages
power consumption
quiescent current
rad-tol commercial operational amplifiers
radiation tolerance
Bandwidth
Degradation
Energy loss
Frequency
Instruments
Neutrons
Operational amplifiers
Power amplifiers
Testing
Voltage
Electrónica (Física)
Radiactividad
© IEEE TNS
Tests on instrumentation amplifiers exposed to neutron radiation have been done. The tested devices were commercial instrumentation amplifiers or designed with rad-tol commercial operational amplifiers. The results show changes in frequency behavior, gain, offset voltage, output saturation voltages, and quiescent current. The radiation tolerance is bigger in amplifiers with JFET input stage or with large frequency bandwidth and is smaller if the amplifier has been designed for reducing the power consumption. The IAs built with OPAMPs have a higher tolerance than the commercial ones, but they have disadvantages: high temperature influence, low CMRR, etc.
Ministerio de Educación y Ciencia
CERN
Depto. de Estructura de la Materia, Física Térmica y Electrónica
Fac. de Ciencias Físicas
TRUE
pub
2023-06-20T10:50:46Z
2023-06-20T10:50:46Z
2003-12
journal article
https://hdl.handle.net/20.500.14352/51327
0018-9499
10.1109/TNS.2003.820628
eng
TIC98-0737
K476/LHC
open access
application/pdf
IEEE-Inst Electrical Electronics Engineers Inc