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oai:docta.ucm.es:20.500.14352/514112023-08-28T05:13:19Zcom_20.500.14352_14col_20.500.14352_15

00925njm 22002777a 4500 dc Bruno, Flavio Yair author Garcia Barriocanal, Javier author Torija, M. author Rivera Calzada, Alberto Carlos author Sefrioui, Zouhair author Leighton, C. author León Yebra, Carlos author Santamaría Sánchez-Barriga, Jacobo author 2008-02-25 Electrical transport properties of heteroepitaxial p-n junctions made of La_(0.8)Sr_(0.2)CoO_(3) and SrTi_(0.99)Nb_(0.01)O_(3) were studied. Junctions display highly rectifying current-voltage characteristics over a wide temperature range (20–300 K). Two distinct transport mechanisms are identified: tunneling assisted by interface states at T<130 K and diffusion/recombination at higher temperatures. Capacitance-voltage characteristics are used to determine the junction built-in potential at different frequencies. A capacitance relaxation is found due to charge trapping at interface states. Interface states, which deeply affect transport, are discussed in connection to charge-transfer processes related to the polarity mismatch at the interface. 0003-6951 10.1063/1.2887905 https://hdl.handle.net/20.500.14352/51411 http://dx.doi.org/10.1063/1.2887905 http://scitation.aip.org/ Effects of interface states on the transport properties of all-oxide La_(0.8)Sr_(0.2)CoO_(3)/SrTi_(0.99)Nb_(0.01)O_(3) p-n heterojunctions