2026-06-27T11:23:51Zhttps://docta.ucm.es/rest/oai/request

oai:docta.ucm.es:20.500.14352/514112023-08-28T05:13:19Zcom_20.500.14352_14col_20.500.14352_15

Bruno, Flavio Yair Garcia Barriocanal, Javier Torija, M. Rivera Calzada, Alberto Carlos Sefrioui, Zouhair Leighton, C. León Yebra, Carlos Santamaría Sánchez-Barriga, Jacobo 2023-06-20T10:53:47Z 2023-06-20T10:53:47Z 2008-02-25 0003-6951 10.1063/1.2887905 https://hdl.handle.net/20.500.14352/51411 http://dx.doi.org/10.1063/1.2887905 http://scitation.aip.org/ Electrical transport properties of heteroepitaxial p-n junctions made of La_(0.8)Sr_(0.2)CoO_(3) and SrTi_(0.99)Nb_(0.01)O_(3) were studied. Junctions display highly rectifying current-voltage characteristics over a wide temperature range (20–300 K). Two distinct transport mechanisms are identified: tunneling assisted by interface states at T<130 K and diffusion/recombination at higher temperatures. Capacitance-voltage characteristics are used to determine the junction built-in potential at different frequencies. A capacitance relaxation is found due to charge trapping at interface states. Interface states, which deeply affect transport, are discussed in connection to charge-transfer processes related to the polarity mismatch at the interface. eng open access Effects of interface states on the transport properties of all-oxide La_(0.8)Sr_(0.2)CoO_(3)/SrTi_(0.99)Nb_(0.01)O_(3) p-n heterojunctions journal article