2026-06-27T12:28:01Zhttps://docta.ucm.es/rest/oai/request

oai:docta.ucm.es:20.500.14352/520902023-08-26T23:01:41Zcom_20.500.14352_14col_20.500.14352_15

Quesada, A. García, M. A. Andrés, M. Hernando Grande, Antonio Fernández, J. F. Caballero, A. C. Martín González, M. S. Briones, F. 2023-06-20T12:39:28Z 2023-06-20T12:39:28Z 2006-12 0021-8979 10.1063/1.2399884 https://hdl.handle.net/20.500.14352/52090 http://dx.doi.org/10.1063/1.2399884 http://aip.scitation.org The origin of ferromagnetism in diluted magnetic semiconductors is still an open question, yielding a great deal of research across the world. This work focuses on the Co-Zn-O system. Room-temperature ferromagnetism is observed after a partial reaction of Co_3O_4 and ZnO, which can be ascribed neither to carrier mediation nor segregated cobalt metallic clusters. Another mechanism is yielding room-temperature ferromagnetism. This mechanism is associated with a partial reaction of ZnO and Co_3O_4 grains, and always appears when the starting phases (Co_3O_4 and ZnO) are present in the sample, suggesting that interfaces are involved in the origin of the observed ferromagnetism. eng open access Ferromagnetism in bulk Co-Zn-O journal article