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oai:docta.ucm.es:20.500.14352/520902023-08-26T23:01:41Zcom_20.500.14352_14col_20.500.14352_15

Ferromagnetism in bulk Co-Zn-O Quesada, A. García, M. A. Andrés, M. Hernando Grande, Antonio Fernández, J. F. Caballero, A. C. Martín González, M. S. Briones, F. 538.9 Room-temperature Ffrromagnetism Doped ZnO Magnetic semiconductors Thin-films Origin Zn1-Xcoxo System Física de materiales Física del estado sólido 2211 Física del Estado Sólido ©2006 American Institute of Physics. This work has been supported by the University Complutense through the project PR1/05/13325 and CICYT project MAT2004–04843–C02–01. The origin of ferromagnetism in diluted magnetic semiconductors is still an open question, yielding a great deal of research across the world. This work focuses on the Co-Zn-O system. Room-temperature ferromagnetism is observed after a partial reaction of Co_3O_4 and ZnO, which can be ascribed neither to carrier mediation nor segregated cobalt metallic clusters. Another mechanism is yielding room-temperature ferromagnetism. This mechanism is associated with a partial reaction of ZnO and Co_3O_4 grains, and always appears when the starting phases (Co_3O_4 and ZnO) are present in the sample, suggesting that interfaces are involved in the origin of the observed ferromagnetism. Universidad Complutense de Madrid CICYT Depto. de Física de Materiales Fac. de Ciencias Físicas TRUE pub 2023-06-20T12:39:28Z 2023-06-20T12:39:28Z 2006-12 journal article https://hdl.handle.net/20.500.14352/52090 0021-8979 10.1063/1.2399884 eng PR1/05/13325 MAT2004–04843–C02–01. open access application/pdf American Institute of Physics