2026-06-08T04:18:37Zhttps://docta.ucm.es/rest/oai/request

oai:docta.ucm.es:20.500.14352/521232023-08-28T05:12:44Zcom_20.500.14352_14col_20.500.14352_15

00925njm 22002777a 4500 dc Nogales Díaz, Emilio author 2008-04-01 Optical energy gaps are measured for high-quality Al_(1-x)In_xN-on-GaN epilayers with a range of compositions around the lattice match point using photoluminescence and photoluminescence excitation spectroscopy. These data are combined with structural data to determine the compositional dependence of emission and absorption energies. The trend indicates a very large bowing parameter of ≈ to 6 eV and differences with earlier reports are discussed. Very large Stokes' shifts of 0.4-0.8 eV are observed in the composition range 0.13 < x < 0.24, increasing approximately linearly with InN fraction despite the change of sign of the piezoelectric field. 0021-8979 10.1063/1.2898533 https://hdl.handle.net/20.500.14352/52123 http://dx.doi.org/10.1063/1.2898533 http://aip.scitation.org Optical energies of AllnN epilayers