2026-06-07T23:47:49Zhttps://docta.ucm.es/rest/oai/requestoai:docta.ucm.es:20.500.14352/521232023-08-28T05:12:44Zcom_20.500.14352_14col_20.500.14352_15
Docta Complutense
author
Nogales Díaz, Emilio
2023-06-20T12:39:53Z
2023-06-20T12:39:53Z
2008-04-01
0021-8979
10.1063/1.2898533
https://hdl.handle.net/20.500.14352/52123
http://dx.doi.org/10.1063/1.2898533
http://aip.scitation.org
Optical energy gaps are measured for high-quality Al_(1-x)In_xN-on-GaN epilayers with a range of compositions around the lattice match point using photoluminescence and photoluminescence excitation spectroscopy. These data are combined with structural data to determine the compositional dependence of emission and absorption energies. The trend indicates a very large bowing parameter of ≈ to 6 eV and differences with earlier reports are discussed. Very large Stokes' shifts of 0.4-0.8 eV are observed in the composition range 0.13 < x < 0.24, increasing approximately linearly with InN fraction despite the change of sign of the piezoelectric field.
eng
Optical energies of AllnN epilayers
journal article
URL
https://docta.ucm.es/bitstreams/ff418202-a9a3-423a-93f6-f5dd9090b28e/download
File
MD5
bb3f3514612653a5b2fd004bde2d2f11
617724
application/pdf
NogalesDíazE 03 LIBRE.pdf