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oai:docta.ucm.es:20.500.14352/521232023-08-28T05:12:44Zcom_20.500.14352_14col_20.500.14352_15

Nogales Díaz, Emilio 2023-06-20T12:39:53Z 2023-06-20T12:39:53Z 2008-04-01 0021-8979 10.1063/1.2898533 https://hdl.handle.net/20.500.14352/52123 http://dx.doi.org/10.1063/1.2898533 http://aip.scitation.org Optical energy gaps are measured for high-quality Al_(1-x)In_xN-on-GaN epilayers with a range of compositions around the lattice match point using photoluminescence and photoluminescence excitation spectroscopy. These data are combined with structural data to determine the compositional dependence of emission and absorption energies. The trend indicates a very large bowing parameter of ≈ to 6 eV and differences with earlier reports are discussed. Very large Stokes' shifts of 0.4-0.8 eV are observed in the composition range 0.13 < x < 0.24, increasing approximately linearly with InN fraction despite the change of sign of the piezoelectric field. eng open access Optical energies of AllnN epilayers journal article