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oai:docta.ucm.es:20.500.14352/521232023-08-28T05:12:44Zcom_20.500.14352_14col_20.500.14352_15

Optical energies of AllnN epilayers Nogales Díaz, Emilio 538.9 Vapor-phase epitaxy Quantum-wells Gan Alloys Films Física del estado sólido Física matemática 2211 Física del Estado Sólido ©2008 American Institute of Physics. Financial support from the UK EPSRC, FCT, Portugal (BPD/18958/2004 and PTDC/FIS/65233/2006) and from the ORS award scheme (K.W.) is gratefully acknowledged. Artiículo firmado por mas de 10 autores. Optical energy gaps are measured for high-quality Al_(1-x)In_xN-on-GaN epilayers with a range of compositions around the lattice match point using photoluminescence and photoluminescence excitation spectroscopy. These data are combined with structural data to determine the compositional dependence of emission and absorption energies. The trend indicates a very large bowing parameter of ≈ to 6 eV and differences with earlier reports are discussed. Very large Stokes' shifts of 0.4-0.8 eV are observed in the composition range 0.13 < x < 0.24, increasing approximately linearly with InN fraction despite the change of sign of the piezoelectric field. UK EPSRC FCT, Portugal Depto. de Física de Materiales Fac. de Ciencias Físicas TRUE pub 2023-06-20T12:39:53Z 2023-06-20T12:39:53Z 2008-04-01 journal article https://hdl.handle.net/20.500.14352/52123 0021-8979 10.1063/1.2898533 eng BPD/18958/2004 PTDC/FIS/65233/2006 open access application/pdf American Institute of Physics