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oai:docta.ucm.es:20.500.14352/521232023-08-28T05:12:44Zcom_20.500.14352_14col_20.500.14352_15

Optical energies of AllnN epilayers Nogales Díaz, Emilio ©2008 American Institute of Physics. Financial support from the UK EPSRC, FCT, Portugal (BPD/18958/2004 and PTDC/FIS/65233/2006) and from the ORS award scheme (K.W.) is gratefully acknowledged. Artiículo firmado por mas de 10 autores. Optical energy gaps are measured for high-quality Al_(1-x)In_xN-on-GaN epilayers with a range of compositions around the lattice match point using photoluminescence and photoluminescence excitation spectroscopy. These data are combined with structural data to determine the compositional dependence of emission and absorption energies. The trend indicates a very large bowing parameter of ≈ to 6 eV and differences with earlier reports are discussed. Very large Stokes' shifts of 0.4-0.8 eV are observed in the composition range 0.13 < x < 0.24, increasing approximately linearly with InN fraction despite the change of sign of the piezoelectric field. 2023-06-20T12:39:53Z 2023-06-20T12:39:53Z 2008-04-01 journal article 0021-8979 10.1063/1.2898533 https://hdl.handle.net/20.500.14352/52123 http://dx.doi.org/10.1063/1.2898533 http://aip.scitation.org eng BPD/18958/2004 PTDC/FIS/65233/2006 open access American Institute of Physics