2026-08-20T17:00:16Zhttps://docta.ucm.es/rest/oai/requestoai:docta.ucm.es:20.500.14352/533652024-08-27T13:32:45Zcom_20.500.14352_14col_20.500.14352_21
Docta Complutense
author
Martil De La Plaza, Ignacio
author
González Díaz, Germán
author
Olea Ariza, Javier
author
San Andrés Serrano, Enrique
2023-06-20T13:40:58Z
2023-06-20T13:40:58Z
2009
978-1-4244-2838-0
10.1109/SCED.2009.4800424
https://hdl.handle.net/20.500.14352/53365
http://dx.doi.org/10.1109/SCED.2009.4800424
http://ieeexplore.ieee.org
In this work we report the successful doping of Si with Ti at doses beyond the Mott limit for this element keeping high lattice quality. Ti implantation in Si at high doses and subsequent Pulsed-Laser Melting (PLM) annealing have been performed. Time-of-Flight Secondary Ion Mass Spectroscopy (SIMS) measurements confirm that Ti concentration exceed the Mott limit in the implanted layer, and Glancing Incidence X-Ray Diffraction (GIXRD) and Transmission Electron Microscopy (TEM) measurements prove that good crystallinity can be achieved over solid solubility limit. Hall effect characterization points out a high electrical activation and high mobility in all samples.
eng
High Quality Ti-Implanted Si Layers Above Solid Solubility Limit
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Martil,24.pdf
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Martil,24.pdf.txt