2026-08-20T02:03:40Zhttps://docta.ucm.es/rest/oai/request

oai:docta.ucm.es:20.500.14352/533652024-08-27T13:32:45Zcom_20.500.14352_14col_20.500.14352_21

Martil De La Plaza, Ignacio González Díaz, Germán Olea Ariza, Javier San Andrés Serrano, Enrique 2023-06-20T13:40:58Z 2023-06-20T13:40:58Z 2009 978-1-4244-2838-0 10.1109/SCED.2009.4800424 https://hdl.handle.net/20.500.14352/53365 http://dx.doi.org/10.1109/SCED.2009.4800424 http://ieeexplore.ieee.org In this work we report the successful doping of Si with Ti at doses beyond the Mott limit for this element keeping high lattice quality. Ti implantation in Si at high doses and subsequent Pulsed-Laser Melting (PLM) annealing have been performed. Time-of-Flight Secondary Ion Mass Spectroscopy (SIMS) measurements confirm that Ti concentration exceed the Mott limit in the implanted layer, and Glancing Incidence X-Ray Diffraction (GIXRD) and Transmission Electron Microscopy (TEM) measurements prove that good crystallinity can be achieved over solid solubility limit. Hall effect characterization points out a high electrical activation and high mobility in all samples. eng open access High Quality Ti-Implanted Si Layers Above Solid Solubility Limit book part