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oai:docta.ucm.es:20.500.14352/533682024-08-27T16:08:06Zcom_20.500.14352_14col_20.500.14352_21

Raman scattering characterization of implanted ZnO Martil De La Plaza, Ignacio González Díaz, Germán 537 Modes. Electricidad Electrónica (Física) 2202.03 Electricidad Symposium on Zinc Oxide and Related Materials (2006. Boston, USA). In this work we investigate the lattice damage induced in ZnO implanted with potential group V acceptors by means of Raman scattering. ZnO samples were implanted with N and P to hi-h doses and Raman spectra were obtained prior and after rapid thermal annealing (RTA). Characteristic disorder-activated modes are observed in the spectra that can be used to assess the degree of lattice damage. ZnO samples were also implanted with native Zn+ and O+ ions under similar conditions to study specific effects of implantation with N+ and P+. As revealed by the intensity of disorder-activated bands, the implantation induced lattice damage is considerably higher for Zn+ than for the lighter O+ ion. In samples implanted with N+ additional Raman peaks emerge that are not observed either in the samples implanted with the native Zn+ and O+ ions or in the samples implanted with P+, thus pointing to a local vibrational mode of N or a N complex as the origin of these modes. Disorder-activated features are fully removed by RTA, indicating a high degree of lattice recovery by RTA even for the heavily damaged ZnO samples implanted with Zn+. Depto. de Estructura de la Materia, Física Térmica y Electrónica Fac. de Ciencias Físicas TRUE pub 2023-06-20T13:41:01Z 2023-06-20T13:41:01Z 2007 book part https://hdl.handle.net/20.500.14352/53368 XXXX-XXXX 10.1557/PROC-0957-K07-24 MRS Proceedings metadata only access Materials Research Society