2026-06-28T14:57:56Zhttps://docta.ucm.es/rest/oai/requestoai:docta.ucm.es:20.500.14352/533692024-08-27T14:54:19Zcom_20.500.14352_14col_20.500.14352_21
Docta Complutense
author
Martil De La Plaza, Ignacio
author
González Díaz, Germán
author
San Andrés Serrano, Enrique
2023-06-20T13:41:01Z
2023-06-20T13:41:01Z
2005
0-7803-8810-0
10.1109/SCED.2005.1504303
https://hdl.handle.net/20.500.14352/53369
http://dx.doi.org/10.1109/SCED.2005.1504303
http://ieeexplore.ieee.org
A comparison between interface quality of several temperatures thermal annealed HPRS TiO2 films and 750 degrees C annealed ALD TiO2 films has been established. Our attention has been focused on the interfacial state and disordered induced gap state densities. From our results, HPRS films submitted to in situ 900 degrees C thermal annealing in oxygen atmosphere exhibit the best characteristics, with D-it, density being the lowest value measured in this work (5 - 6 x 10(11) cm(-2) eV(-1)), and undetectable conductance transients within our experimental limits.
eng
Interface quality of high-pressure reactive sputtered and atomic layer deposited titanium oxide thin films on silicon
book part
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https://docta.ucm.es/bitstreams/73a97b73-d488-4cd0-80a1-fc45d1c58c2b/download
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4d4248a7e0d10939ddacb283fbaab93b
643877
application/pdf
Martil,40.pdf
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14980
text/plain
Martil,40.pdf.txt