2026-06-08T07:25:34Zhttps://docta.ucm.es/rest/oai/requestoai:docta.ucm.es:20.500.14352/533992023-09-07T15:35:47Zcom_20.500.14352_14col_20.500.14352_21
Using optimization techniques to characterize irradiated CMOS analog switches
Zong, Yi
Franco Peláez, Francisco Javier
Agapito Serrano, Juan Andrés
537.8
Analog switches
COTS
Neutron effects
Optimization
TID effects.
Electrónica (Física)
Radiactividad
Radiation Effects on Components and Systems (RADECS 2004) (5. 2004. Madrid)
This work was supported by the cooperation agreement K746/LHC between CERN & UCM, by the Spanish Research Agency CICYT (FPA2002-00912) and partially supported by Instituto Tecnológico e Nuclear of Portugal.
The use of mathematical optimization techniques allows estimating the degradation of the internal components of irradiated CMOS analog switches from their nonlinear resistance and the value of leakage currents at different power supplies voltages.
Ministerio de Educación y Ciencia
CERN
Portuguese Research Agency (ICCTI)
CICYT
Universidad Complutense de Madrid
Depto. de Estructura de la Materia, Física Térmica y Electrónica
Fac. de Ciencias Físicas
TRUE
pub
2023-06-20T13:41:28Z
2023-06-20T13:41:28Z
2004-09-22
book part
https://hdl.handle.net/20.500.14352/53399
XXXX-XXXX
eng
FPA2002-00912
K476/LHC
open access
application/pdf
INTA