<?xml version="1.0" encoding="UTF-8"?><?xml-stylesheet type="text/xsl" href="static/style.xsl"?><OAI-PMH xmlns="http://www.openarchives.org/OAI/2.0/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/ http://www.openarchives.org/OAI/2.0/OAI-PMH.xsd"><responseDate>2026-06-30T01:23:09Z</responseDate><request verb="GetRecord" identifier="oai:docta.ucm.es:20.500.14352/53407" metadataPrefix="qdc">https://docta.ucm.es/rest/oai/request</request><GetRecord><record><header><identifier>oai:docta.ucm.es:20.500.14352/53407</identifier><datestamp>2023-09-07T20:01:07Z</datestamp><setSpec>com_20.500.14352_14</setSpec><setSpec>col_20.500.14352_21</setSpec></header><metadata><qdc:qualifieddc xmlns:qdc="http://dspace.org/qualifieddc/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:dcterms="http://purl.org/dc/terms/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:doc="http://www.lyncode.com/xoai" xsi:schemaLocation="http://purl.org/dc/elements/1.1/ http://dublincore.org/schemas/xmls/qdc/2006/01/06/dc.xsd http://purl.org/dc/terms/ http://dublincore.org/schemas/xmls/qdc/2006/01/06/dcterms.xsd http://dspace.org/qualifieddc/ http://www.ukoln.ac.uk/metadata/dcmi/xmlschema/qualifieddc.xsd">
   <dc:title>Evolution of lowest supply voltage and hysteresis phenomena in irradiated analog CMOS switches</dc:title>
   <dc:creator>Franco Peláez, Francisco Javier</dc:creator>
   <dc:creator>Zong, Yi</dc:creator>
   <dc:creator>Agapito Serrano, Juan Andrés</dc:creator>
   <dc:creator>Casas-Cubillos, Juan</dc:creator>
   <dc:creator>Rodríguez-Ruiz, Miguel Ángel</dc:creator>
   <dcterms:abstract>Radiation tests on CMOS analog switches were carried out in order to select the most tolerant device for future use in the cryogenic system of the CERN large hadron collider. After irradiation, the devices showed some interesting changes related to the power supplies: an increase in the lowest supply voltage capable of biasing correctly the devices; some devices cannot work with TTL logic levels. In addition, hysteresis phenomena appear.</dcterms:abstract>
   <dcterms:dateAccepted>2023-06-20T13:41:36Z</dcterms:dateAccepted>
   <dcterms:available>2023-06-20T13:41:36Z</dcterms:available>
   <dcterms:created>2023-06-20T13:41:36Z</dcterms:created>
   <dcterms:issued>2004-07-22</dcterms:issued>
   <dc:type>book part</dc:type>
   <dc:identifier>https://hdl.handle.net/20.500.14352/53407</dc:identifier>
   <dc:identifier>XXXX-XXXX</dc:identifier>
   <dc:identifier>10.1109/REDW.2004.1352912</dc:identifier>
   <dc:language>eng</dc:language>
   <dc:relation>FPA2002- 00912</dc:relation>
   <dc:relation>K476/LHC</dc:relation>
   <dc:rights>open access</dc:rights>
   <dc:publisher>IEEE-Inst Electrical Electronics Engineers Inc</dc:publisher>
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