2026-06-07T23:49:02Zhttps://docta.ucm.es/rest/oai/requestoai:docta.ucm.es:20.500.14352/535702023-09-07T16:31:11Zcom_20.500.14352_14col_20.500.14352_21
Docta Complutense
author
Nogales Díaz, Emilio
2023-06-20T13:44:44Z
2023-06-20T13:44:44Z
2006
1-55899-846-2
10.1557/proc-0892-ff23-13
https://hdl.handle.net/20.500.14352/53570
http://dx.doi.org/10.1557/proc-0892-ff23-13
https://www.cambridge.org
Comparative studies have been carried out on the cathodoluminescence (CL) and photoluminescence (PL) properties of GaN implanted with Tin and GaN co-implanted with Tin and a low concentration of Er. Room temperature CL spectra were acquired in an electron probe microanalyser to investigate the rare earth emission. The room temperature CL intensity exhibits a strong dependence on the annealing temperature of the implanted samples. The results of CL temperature dependence are reported for blue emission (similar to 477 nm) which is due to intra 4f-shell electron transitions (¹G₄→³ H₆) associated with Tm^(3) ions. The 477 nm blue CL emission is enhanced strongly as the annealing temperature increases up to 1200 ⁰C. Blue PL emission has also been observed from the sample annealed at 1200 ⁰C . To our knowledge, this is the first observation of blue PL emission from Tin implanted GaN samples. Intra- 4f transitions from the ¹D₂ level (similar to 465 nm emission lines) of Tm(3+) ions in GaN have been observed in GaN:Tm films at temperatures between 20-200 K. We will discuss the temperature dependent Tm(3+) emission in both GaN:Tm,Er and GaN:Tm samples.
eng
Characterization of the blue emission of Tm/Er co-implanted GaN
book part
URL
https://docta.ucm.es/bitstreams/69fb3632-0dfe-4fa9-b21a-f6b10474f99f/download
File
MD5
e84a7ee24d08cdd459820dc44ced26fb
177800
application/pdf
NogalesDíazE 06 PREPRINT.pdf
URL
https://docta.ucm.es/bitstreams/8b5b048c-6739-478a-a6cb-34b7f5fe3b2b/download
File
MD5
ba3f32e708da4f91bfe87208a25af619
16254
text/plain
NogalesDíazE 06 PREPRINT.pdf.txt