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Site multiplicity of rare earth ions in III-nitrides O'Donnell, KP Katchkanova, V. Wang, K. Martin, R.W. Edwards, P.R. Hourahine, B. Nogales Díaz, Emilio Mosselmans, J.F.W. De Vries, B. 538.9 Doped gan Photoluminescence Er Física de materiales Física del estado sólido 2211 Física del Estado Sólido © Materials Research Society. ESSN: 1946-4274 Symposium on GaN, AIN, InN and Their Alloys. (2004. Boston) We are grateful to the European Union for supporting this work unde Contract HRPN-CT-2001-00297 This presentation reviews recent lattice location studies of rare earth (RE) ions in GaN by electron emission channelling (EC) and X-ray absorption fine structure (XAFS) techniques. These studies agree that RE ions at low concentrations (whether they are incorporated during growth or introduced later by ion implantation) predominantly occupy Ga substitutional sites, as expected from considerations of charge equivalence. We combine this result with some examples of the well-documented richness of optical spectra of GaN:RE3+ to suggest that the luminescence of these materials may be ascribed to a family of rather similar sites, all of which feature the REGa defect. European Union Depto. de Física de Materiales Fac. de Ciencias Físicas TRUE pub 2023-06-20T13:44:46Z 2023-06-20T13:44:46Z 2005 book part https://hdl.handle.net/20.500.14352/53572 XXXX-XXXX 10.1557/proc-831-e9.6 eng MRS Online Proceedings Library HRPN-CT-2001-00297 open access application/pdf Materials Research Society