2026-06-28T20:33:33Zhttps://docta.ucm.es/rest/oai/requestoai:docta.ucm.es:20.500.14352/588262024-09-06T18:03:23Zcom_20.500.14352_14col_20.500.14352_15
Carrier recombination at screw dislocations in n-type AlGaN layers
Albrecht, M.
Cremades RodrÃguez, Ana Isabel
Krinke, J.
Christiansen, S.
Ambacher, O.
Piqueras De Noriega, Francisco Javier
Strunk, H. P.
Stutzmann, M.
We analyse the recombination and scattering at dislocations in Si doped AlGaN layers by transmission electron microscopy (TEM), electron beam induced current (EBIC) and cathodoluminescence. We show that c-type screw dislocations are nonradiative recombination centres. From temperature dependent measurements of the EBIC contrast we find a shallow acceptor state 20 meV above the valence band. The level can be understood iri terms of one-dimensional dislocation bands split off by the dislocation deformation field. In addition piezoelectric potentials play a role.
2023-06-20T18:52:27Z
2023-06-20T18:52:27Z
2023-06-20T18:52:27Z
1999-11
journal article
https://hdl.handle.net/20.500.14352/58826
0370-1972
10.1002/(SICI)1521-3951(199911)216:1<409::AID-PSSB409>3.3.CO;2-B
eng
restricted access
Wiley-V C H Verlag Gmbh