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oai:docta.ucm.es:20.500.14352/589222024-09-09T12:19:50Zcom_20.500.14352_14col_20.500.14352_15

Cathodoluminescence from Er_2O_3-doped n-type GaSb : Te crystals Hidalgo Alcalde, Pedro Plaza, J. L. Méndez Martín, María Bianchi Dieguez, E. Piqueras De Noriega, Francisco Javier 538.9 Doped Gasb Erbium Luminescence Centers Silicon Física de materiales © 2002 IOP Publishing Ltd. This work was supported by MCYT (Project MAT2000-2119). Conference on Extended Defects in Semiconductors (EDS 2002)(2002. Bologna, Italia) The luminescence of Te-doped GaSb crystals codoped with Er2O3 has been studied by means of cathodoluminescene (CL) using a scanning electron microscope. Doping with erbium oxide causes a substantial increase of the luminescence intensity of the crystals and spectral broadening. Deconvolution of the CL spectra reveals the existence of four components. The presence of erbium oxide induces a decrease of the 746 meV emission characteristic of Te-doped samples. CL images show a complex distribution of recombination centres which depends to a large extent on he local Te concentration. MCYT Depto. de Física de Materiales Fac. de Ciencias Físicas TRUE pub 2023-06-20T18:55:08Z 2023-06-20T18:55:08Z 2002-12-16 journal article https://hdl.handle.net/20.500.14352/58922 0953-8984 10.1088/0953-8984/14/48/370 eng MAT 2000-2119 open access application/pdf Institute of Physics