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oai:docta.ucm.es:20.500.14352/589292024-09-06T18:45:42Zcom_20.500.14352_14col_20.500.14352_15

Compositional and structural analysis of Nd-doped GaSb bulk crystals grown by the vertical Bridgman technique Plaza, J. L: Hidalgo Alcalde, Pedro Méndez Martín, María Bianchi Piqueras De Noriega, Francisco Javier Dieguez, E. 538.9 Gallium-Phosphide Luminescence Silicon Ytterbium Gaas Inp Gap Física de materiales © 2002 Published by Elsevier Science B.V. This work has been supported by CICYT under theproje ct ESP-98 1340 and by INTAS-ESA Project number 99 01814. Nd-doped GaSb bulk crystals with three different dopant concentrations have been grown by the vertical Bridgman technique. The axial segregation has been characterised by obtaining the effective segregation coefficient. Differences in the value of this coefficient show its dopant concentration dependence. Resistivity, carrier density and mobility have also been obtained showing the p-type nature of this material. Structural and compositional properties have been studied revealing some inclusions with high Nd concentration in the highest Nd-doped ingot. CICYT INTAS-ESA Depto. de Física de Materiales Fac. de Ciencias Físicas TRUE pub 2023-06-20T18:55:18Z 2023-06-20T18:55:18Z 2002-06 journal article https://hdl.handle.net/20.500.14352/58929 0022-0248 10.1016/S0022-0248(02)01249-6 eng ESP-98 1340 99 01814. open access application/pdf Elsevier Science B.V.