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oai:docta.ucm.es:20.500.14352/589392024-09-09T15:03:35Zcom_20.500.14352_14col_20.500.14352_15

Scanning tunneling spectroscopy of transition-metal-doped GaSb Hidalgo Alcalde, Pedro Méndez Martín, María Bianchi Piqueras De Noriega, Francisco Javier Dutta, P: S. Dieguez, E. 538.9 Gallium Antimonide Física de materiales ©1999 The American Physical Society. This work was supported by DGES (PB96-0639) and by CICYT (ESP98-1340) (MAT98-1306E). V- and Ru-doped GaSb crystals have been investigated by scanning tunneling spectroscopy in a combined scanning electron microscope-scanning tunneling microscope system. Local variations of surface band gap have been measured with high spatial resolution. Precipitates in both kinds of doped samples show a nearly metallic behavior. The surface band gaps in the GaSb matrix have been found to depend on the dopant. [S0163-1829(99)06439-5]. DGES CICYT Depto. de Física de Materiales Fac. de Ciencias Físicas TRUE pub 2023-06-20T18:55:38Z 2023-06-20T18:55:38Z 1999-10-15 journal article https://hdl.handle.net/20.500.14352/58939 0163-1829 10.1103/PhysRevB.60.10613 eng PB96-0639 ESP98-1340 MAT98-1306E open access application/pdf American Physical Society