2026-06-01T02:36:18Zhttps://docta.ucm.es/rest/oai/requestoai:docta.ucm.es:20.500.14352/589422024-09-09T15:04:33Zcom_20.500.14352_14col_20.500.14352_15
Scanning tunneling spectroscopy study of erbium doped GaSb crystals
Hidalgo Alcalde, Pedro
Méndez Martín, María Bianchi
Piqueras De Noriega, Francisco Javier
Plaza, J. L.
Dieguez, E.
538.9
Phase Epitaxy
Cathodoluminescence
Photoluminescence
Microscopy
Excitation
Física de materiales
© 1999 American Institute of Physics.
This work was supported by DGES (Project No. PB96-0639) and by CICYT (Project Nos. ESP95-0148 and ESP98-1340)
Er doped GaSb single crystals have been studied by scanning tunneling spectroscopy (STS) and cathodoluminescence (CL) in a combined scanning electron microscope-scanning tunnelling microscope system. The surface band gap in doped samples has been found to be about 0.5 eV while in undoped crystals the gap is close to the bulk value. Inhomogeneities in the local electronic properties of the doped crystals are studied by a correlation of the CL images and STS data.
DGES
CICYT
Depto. de Física de Materiales
Fac. de Ciencias Físicas
TRUE
pub
2023-06-20T18:55:43Z
2023-06-20T18:55:43Z
1999-08-01
journal article
https://hdl.handle.net/20.500.14352/58942
0021-8979
10.1063/1.370910
eng
PB96-0639
ESP95-0148
ESP98
open access
application/pdf
American Institute of Physics