2026-06-28T14:59:46Zhttps://docta.ucm.es/rest/oai/request

oai:docta.ucm.es:20.500.14352/589522023-08-27T08:20:14Zcom_20.500.14352_14col_20.500.14352_15

Microwave noise measurements on Al0.3Ga0.7As/GaAs channels grown by molecular beam epitaxy using As-2 and As-4 Miranda Pantoja, José Miguel Sebastián Franco, José Luis We present microwave noise measurements performed on different high electron mobility transistor channels under both darkness and illumination. Two structures of Alo(0.3)Gao(0.7)As/GaAs layers have been grown with beams of Asp and As-4 using molecular beam epitaxy. The measured room temperature, Hall mobilities and sheet carrier densities have demonstrated in both cases a good de performance of the channels. However, the measurement of the noise temperature at 1.5 GHz has shown the sample grown with As-4 to be considerably noisier than the one grown with AS(4). 2023-06-20T18:56:01Z 2023-06-20T18:56:01Z 2023-06-20T18:56:01Z 1998-07 journal article https://hdl.handle.net/20.500.14352/58952 0268-1242 10.1088/0268-1242/13/7/002 eng ERBFMRXCT960050 SFB 241-IMES COP 94/01180 restricted access Iop Publishing Ltd