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oai:docta.ucm.es:20.500.14352/589662024-08-29T15:04:34Zcom_20.500.14352_14col_20.500.14352_15

Sawtooth superlattices in a 2-band semiconductor Domínguez-Adame Acosta, Francisco Méndez Martín, María Bianchi © 1994 IOP Publishing Ltd. The authors would like to thank E Macia and A Sfinchez for a critical reading of the manuscript. This work is partially supported by UCM under Project PR161/93-4811. We consider electron dynamics in two-band semiconductor superlattices within the envelope function approximation. We develop a numerical method, based on the properties of the periodic continued fractions, to find the dispersion relation inside allowed minibands and to obtain the envelope functions. As an application, we concentrate on GaAs sawtooth-doped superlattices, consisting of periodic alternating n- and p-type delta-doped sheets separated by undoped material. Results are compared with one-band semiconductor predictions, and we find that coupling of bands in the host semiconductor indeed gives rise to relevant effects, especially for higher-minibands. 2023-06-20T18:56:27Z 2023-06-20T18:56:27Z 1994-07 journal article 0268-1242 10.1088/0268-1242/9/7/010 https://hdl.handle.net/20.500.14352/58966 http://iopscience.iop.org/0268-1242/9/7/010 http://iopscience.iop.org eng PR161/93- 4811 open access IOP Publishing LTD