2026-06-28T20:23:25Zhttps://docta.ucm.es/rest/oai/request

oai:docta.ucm.es:20.500.14352/589982024-09-09T17:57:35Zcom_20.500.14352_14col_20.500.14352_15

Influence of te concentration on the infrared cathodoluminescence of GaAs:Te wafers Méndez Martín, María Bianchi Piqueras De Noriega, Francisco Javier © 1991 American institute of Physics. This work was supported by the Comision Interministerial de Ciencia y Tecnologia (Project PB86-015 1) and by DGlCYT-DAAD. The authors thank Wacker-Chemitronic (Dr. K. Liihnert) for providing the samples Cathodoluminescence (CL) scanning electron microscopy has been used to investigate the nature and distribution of defects involved in the infrared emission of GaAs:Te wafers. Spectral and CL-contrast changes as a function of doping level have been found. Profiles of infrared CL intensity across the wafers show an inverted U shape. 2023-06-20T18:57:31Z 2023-06-20T18:57:31Z 1991-03-01 journal article 0021-8979 10.1063/1.348636 https://hdl.handle.net/20.500.14352/58998 http://dx.doi.org/10.1063/1.348636 http://scitation.aip.org eng PB86-015 1 open access Amer Inst Physics