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oai:docta.ucm.es:20.500.14352/590072024-08-29T14:29:26Zcom_20.500.14352_14col_20.500.14352_15

Domínguez-Adame Acosta, Francisco Maciá Barber, Enrique Alfonso Méndez Martín, María Bianchi 2023-06-20T18:57:47Z 2023-06-20T18:57:47Z 1994-10-31 0375-9601 10.1016/0375-9601(94)90295-X https://hdl.handle.net/20.500.14352/59007 http://dx.doi.org/10.1016/0375-9601(94)90295-X http://www.sciencedirect.com/ http://arxiv.org/abs/cond-mat/9409073 We study the electronic structure of a new type of Fibonacci superlattice based on Si delta-doped GaAs. Assuming that delta-doped layers are equally spaced, quasiperiodicity is introduced by selecting two different donor concentrations and arranging them according to the Fibonacci series along the growth direction. The one-electron potential due to delta-doping is obtained by means of the Thomas-Fermi approach. The resulting energy spectrum is then found by solving the corresponding effective-mass wave equation. We find that a self-similar spectrum can be seen in the band structure. Electronic transport properties of samples are also discussed and related to the degree of spatial localization of electronic envelope functions. eng restricted access Electronic-structure of fibonacci Si δ-doped GaAs journal article