2026-07-21T11:03:37Zhttps://docta.ucm.es/rest/oai/request

oai:docta.ucm.es:20.500.14352/591062024-08-27T14:46:02Zcom_20.500.14352_14col_20.500.14352_15

00925njm 22002777a 4500 dc Martil De La Plaza, Ignacio author González Díaz, Germán author 2001-07 We have analyzed the influence of the dielectric composition and the post deposition rapid thermal annealing (RTA) treatment on the electrical characteristics of electron-cyclotron-resonance plasma-deposited SiNx:H/n and p-In0.53Ga0.47As interfaces. The devices are characterized by means of capacitance-voltage (C-V), deep-level transient spectroscopy (DLTS) and conductance transient analyses. Our results show that a simple cleaning step of the semiconductor surface prior to insulator deposition, and a post deposition RTA process are sufficient to obtain good-quality structures, the n-type being better than the p-type. In both cases, we conclude that a dielectric composition of x = 1.50 seems to be the best choice, and that the most adequate RTA temperature is between 500 degreesC and 600 degreesC. 0021-4922 10.1143/JJAP.40.4479 https://hdl.handle.net/20.500.14352/59106 http://dx.doi.org/10.1143/JJAP.40.4479 http://iopscience.iop.org Electrical characterization of Al/SiNx : H/n and p-In0.53Ga0.47As structures by deep-level transient spectroscopy and conductance transient techniques