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oai:docta.ucm.es:20.500.14352/591392024-09-09T12:58:20Zcom_20.500.14352_14col_20.500.14352_15

00925njm 22002777a 4500 dc Zaldivar, M.H. author Fernández Sánchez, Paloma author Piqueras De Noriega, Francisco Javier author Solís, J. author 1999-01-15 Pulsed laser treatments have been performed in GaN samples of both n- and p-type conductivity. The laser induced changes have been monitored by emissive mode and cathodoluminescence (CL) in a scanning electron microscope. Emissive mode observations indicate a moderate laser induced recrystallization. The luminescent emission has been characterized in both types of samples, GaN:Si and GaN:Mg. Whereas the evolution of CL in the Si doped samples could be explained by the occurrence of laser induced annealing, the luminescent behavior of the Mg doped samples upon irradiation seems to be more complex and a strong relation with the compensation or Mg activation is suggested. Several luminescence bands with maxima ranging from 3.3 to 2.7 eV and their dependence on irradiation conditions have been studied. 0021-8979 10.1063/1.369254 https://hdl.handle.net/20.500.14352/59139 http://dx.doi.org/10.1063/1.369254 http://scitation.aip.org/ Effect of laser irradiation on the luminescence of Mg and Si-doped GaN films