2026-06-08T03:09:07Zhttps://docta.ucm.es/rest/oai/requestoai:docta.ucm.es:20.500.14352/591392024-09-09T12:58:20Zcom_20.500.14352_14col_20.500.14352_15
Docta Complutense
author
Zaldivar, M.H.
author
Fernández Sánchez, Paloma
author
Piqueras De Noriega, Francisco Javier
author
Solís, J.
2023-06-20T19:02:00Z
2023-06-20T19:02:00Z
1999-01-15
0021-8979
10.1063/1.369254
https://hdl.handle.net/20.500.14352/59139
http://dx.doi.org/10.1063/1.369254
http://scitation.aip.org/
Pulsed laser treatments have been performed in GaN samples of both n- and p-type conductivity. The laser induced changes have been monitored by emissive mode and cathodoluminescence (CL) in a scanning electron microscope. Emissive mode observations indicate a moderate laser induced recrystallization. The luminescent emission has been characterized in both types of samples, GaN:Si and GaN:Mg. Whereas the evolution of CL in the Si doped samples could be explained by the occurrence of laser induced annealing, the luminescent behavior of the Mg doped samples upon irradiation seems to be more complex and a strong relation with the compensation or Mg activation is suggested. Several luminescence bands with maxima ranging from 3.3 to 2.7 eV and their dependence on irradiation conditions have been studied.
eng
Effect of laser irradiation on the luminescence of Mg and Si-doped GaN films
journal article
URL
https://docta.ucm.es/bitstreams/e07b84b8-3dcf-4f36-8b54-ad60522ef1ae/download
File
MD5
b6ff9229406508234edfce6258736ba0
598091
application/pdf
PiquerasJ184libre.pdf
URL
https://docta.ucm.es/bitstreams/a4bdb041-1c59-4e32-800a-79634501d6f7/download
File
MD5
dbdf01354e362b28d74801e4ccccca1a
172
text/plain
PiquerasJ184libre.pdf.txt