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00925njm 22002777a 4500 dc Zaldivar, M.H. author Fernández Sánchez, Paloma author Piqueras De Noriega, Francisco Javier author 1998-03-01 Cathodoluminescence (CL) in the scanning electron microscope has been used to study cross-sectional samples on GaN epitaxial films grown on sapphire. Increased CL emission, attributed to the presence of stacking faults and decorated dislocations, is observed in a region of the buffer layer close to the film-substrate interface, In the epilayers also a region of enhanced emission is observed which is partially caused by Si doping and in which structural defects are involved. Cross-sectional CL appears as a useful method to reveal features of the spatial distribution of luminescence, not detectable by plan-view measurements. 0021-8979 10.1063/1.366634 https://hdl.handle.net/20.500.14352/59145 http://dx.doi.org/10.1063/1.366634 http://scitation.aip.org/ Study of defects in GaN films by cross-sectional cathodoluminescence