2026-06-08T08:27:48Zhttps://docta.ucm.es/rest/oai/request

oai:docta.ucm.es:20.500.14352/591452024-09-09T15:20:13Zcom_20.500.14352_14col_20.500.14352_15

Zaldivar, M.H. Fernández Sánchez, Paloma Piqueras De Noriega, Francisco Javier 2023-06-20T19:02:12Z 2023-06-20T19:02:12Z 1998-03-01 0021-8979 10.1063/1.366634 https://hdl.handle.net/20.500.14352/59145 http://dx.doi.org/10.1063/1.366634 http://scitation.aip.org/ Cathodoluminescence (CL) in the scanning electron microscope has been used to study cross-sectional samples on GaN epitaxial films grown on sapphire. Increased CL emission, attributed to the presence of stacking faults and decorated dislocations, is observed in a region of the buffer layer close to the film-substrate interface, In the epilayers also a region of enhanced emission is observed which is partially caused by Si doping and in which structural defects are involved. Cross-sectional CL appears as a useful method to reveal features of the spatial distribution of luminescence, not detectable by plan-view measurements. eng restricted access Study of defects in GaN films by cross-sectional cathodoluminescence journal article