2026-06-27T10:30:06Zhttps://docta.ucm.es/rest/oai/request

oai:docta.ucm.es:20.500.14352/591612024-09-09T13:00:48Zcom_20.500.14352_14col_20.500.14352_15

Panin, G. N. Piqueras De Noriega, Francisco Javier Sochinskii, N. Dieguez, E. 2023-06-20T19:02:47Z 2023-06-20T19:02:47Z 1997-02-17 0003-6951 10.1063/1.118237 https://hdl.handle.net/20.500.14352/59161 http://dx.doi.org/10.1063/1.118237 http://scitation.aip.org/ The aα-HgI_2/CdTe:Ce heterostructures have been studied by cathodoluminescence (CL) in the scanning electron microscope. The alpha-HgI2 expitaxial growth was shown to cause an enhancement of the CL intensity in a layer of the substrate extending up to about 500 mu m from the α-Hgl_2 /CdTe:Ge interface. CL spectra of the layer reveal the appearance of a band related to tellurium vacancies as well as the decrease of the emission attributed to defect complexes involving Ge. The data obtained indicate that Ge-impurity gettering and V-Te generation at the interface take place during α-Hgl_2 epitaxial growth. eng open access Effect of α-Hgl_2 epitaxial growth on the defect structure of CdTe:Ge substrates journal article