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P-to n-type Conversion in GaSb by ion-beam milling Panin, G. N. Dutta, P. S. Piqueras De Noriega, Francisco Javier Dieguez, E. 538.9 Implanted GaSb Hg_(1-X)Cd_xTe Física de materiales (C) 1995 American Institute of Physics. G. Panin thanks Ministerio de Educacion y Ciencia for a research grant and P. S. Dutta thanks CSIR (India) for the award of Senior Research Fellowship. This work was partially supported by the Instituto Nicolas Cabrera, UAM, Madrid, Spain, through a Visiting Scientist Fellowship and by the DGICYT (Project PB93-1256), CICYT (IN93-00129 and ESP95-0148. Inversion in conductivity type of GaSb from p- to n- has been observed as a result of argon ion beam milling. Electron beam induced current (EBIC) measurements have been employed for detecting the type conversion. Enhancement in the luminescence intensity is seen after ion beam treatment. The type conversion is proposed to occur due to a combined effect of generation of native donors and gettering of native accepters originally present in the as-grown samples. DGICYT CICYT Ministerio de Educación y Ciencia Instituto Nicolas Cabrera, UAM, Madrid Depto. de Física de Materiales Fac. de Ciencias Físicas TRUE pub 2023-06-20T19:05:53Z 2023-06-20T19:05:53Z 1995-12-11 journal article https://hdl.handle.net/20.500.14352/59241 0003-6951 10.1063/1.115325 eng PB93-1256 IN93-00129 ESP95-0148 open access application/pdf Amer Inst Physics