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oai:docta.ucm.es:20.500.14352/592492024-09-09T18:19:35Zcom_20.500.14352_14col_20.500.14352_15

Castaldini, A. Cavallini, A. Fraboni, B. Piqueras De Noriega, Francisco Javier 2023-06-20T19:06:19Z 2023-06-20T19:06:19Z 1995-12-01 0021-8979 10.1063/1.360480 https://hdl.handle.net/20.500.14352/59249 http://dx.doi.org/10.1063/1.360480 http://scitation.aip.org/ We have investigated highly doped GaAs:Te at different doping concentrations (>10(17) cm(-3)) to assess the presence of the EL2 trap. We have utilized both capacitance and current transient spectroscopy techniques. The crucial parameter for the detection of EL2 is the relative position of the electron quasi-Fermi level in the depletion region. The observed shift of the EL2 apparent activation energy with increasing doping concentration is also discussed. eng open access The EL2 trap in highly doped GaAs:Te journal article