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Junction spectroscopy of highly doped GaAs: detection of the EL2 trap Castaldini, A. Cavallini, A. Fraboni, B. Piqueras De Noriega, Francisco Javier © 1994 Published by Elsevier B.V. International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (EXMATEC 94) (2. 1994. Parma, Italia) The disappearance of the electron trap at E_t=E_c-0.82 eV (EL2) level in highly doped samples, observed in the literature for N_D-N_A>1x10^17 cm^(-3) has been assessed by junction spectroscopy investigations of liquid-encapsulated Czochralski GaAs:Te with N_D-N_A up to about 7x10^17 cm^(-3). By choosing appropriate spectroscopy methods, we have detected the EL2 peak, even in the most doped sample. This shows that such a defect is present in the material, but its detection is controlled by the quasi-Fermi level position in the gap, which also affects the Schottky diode operating conditions. 2023-06-20T19:07:05Z 2023-06-20T19:07:05Z 1994-12 journal article 0921-5107 10.1016/0921-5107(94)90091-4 https://hdl.handle.net/20.500.14352/59265 http://dx.doi.org/10.1016/0921-5107(94)90091-4 http://www.sciencedirect.com metadata only access Elsevier Science SA