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Docta Complutense author Martil De La Plaza, Ignacio author González Díaz, Germán author García, S. author Martín Pacheco, Jaime Miguel author Castán, E. author Dueñas, S. 2023-06-20T19:08:39Z 2023-06-20T19:08:39Z 1995-11-01 0021-8979 10.1063/1.359710 https://hdl.handle.net/20.500.14352/59307 http://dx.doi.org/10.1063/1.359710 http://scitation.aip.org/ Current-voltage, small-signal measurements, and deep-level transient spectroscopy (DLTS) spectra of p-n junctions made by Mg implantation into undoped InP are described. The I-V characteristics show that the dominant conduction mechanism at forward bias is recombination in the space-charge zone, whereas a thermally activated tunneling mechanism involving a trap at 0.32 eV dominates at reverse bias. Five deep levels located in the upper-half of the band gap were detected in the junctions by DLTS measurements, three of which (at 0.6, 0.45, and 0.425 eV) were found to appear due to rapid thermal annealing. The origin of the other two levels, at 0.31 and 0.285 eV, can be ascribed to implantation damage. Admittance spectroscopy measurements showed the presence of three levels at 0.44, 0.415, and 0.30 eV, all in agreement with those found by DLTS. The DLTS measurements showed that the concentration of deep levels decreased after longer annealing times, and that the concentration of deep levels due to the implantation increased after additional P or Si implantations. This explains the influence of annealing time and additional implantations on the I-V characteristics of the junctions. eng Deep-level transient spectroscopy and electrical characterization of ion-implanted p-n junctions into undoped InP journal article URL https://docta.ucm.es/bitstreams/1bd9617e-5f01-49eb-a10e-dc5e823a3eec/download File MD5 38e3da0278f41891ef1e431f04b8ecb5 668423 application/pdf Martil,108libre.pdf URL https://docta.ucm.es/bitstreams/b6284bb8-0ab7-48cc-94e1-ce01a76be35c/download File MD5 29207947351f555707ca9a68500f372f 26898 text/plain Martil,108libre.pdf.txt