2026-06-27T10:58:56Zhttps://docta.ucm.es/rest/oai/requestoai:docta.ucm.es:20.500.14352/593142024-08-27T16:13:36Zcom_20.500.14352_14col_20.500.14352_15
Docta Complutense
author
Martil De La Plaza, Ignacio
author
González Díaz, Germán
author
Sánchez Quesada, Francisco
author
Santamaría Sánchez-Barriga, Jacobo
2023-06-20T19:08:57Z
2023-06-20T19:08:57Z
1990-06-01
0021-8979
10.1063/1.347113
https://hdl.handle.net/20.500.14352/59314
http://dx.doi.org/10.1063/1.347113
http://scitation.aip.org/
Thin films of CuGaSe2 have been produced by rf sputtering. Compositional, structural, electrical, and optical properties are strongly influenced by growthtemperature. At substrate temperatures lower than 300 °C amorphous or poorly crystalline Se‐excess films are obtained, showing high resistivity (≊103 Ω cm) and optical transitions at 1.62, 1.80, and 2.4 eV (values lower than the single‐crystal counterparts). At the higher growthtemperatures,polycrystalline films are obtained (average grain size 0.7 μm) with lower values of resistivity (1 Ω cm), and optical transitions at 1.68, 1.90, and 2.55 eV (very close to the single‐crystal values). A hopping conduction mechanism has been detected at the lower measuringtemperature (T<150 K), and a grain boundary limited conduction process at the higher measurementstemperature (T>150 K). Structural and compositional characteristics are used to explain the behavior observed in the electrical and optical properties.
eng
Structural, electrical, and optical properties of CuGaSe2 rf sputtered thin films
journal article
URL
https://docta.ucm.es/bitstreams/659718cf-cd07-4425-8578-dae8f4f4b83f/download
File
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f7785f07e736c0b9179e21103ae68573
933951
application/pdf
Martil,122libre.pdf
URL
https://docta.ucm.es/bitstreams/54527770-9a0d-44db-8308-132033aeb90a/download
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692c6e4457be4146930fd1bfe3528b08
270
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Martil,122libre.pdf.txt