2026-06-27T23:16:11Zhttps://docta.ucm.es/rest/oai/request

oai:docta.ucm.es:20.500.14352/593142024-08-27T16:13:36Zcom_20.500.14352_14col_20.500.14352_15

Structural, electrical, and optical properties of CuGaSe2 rf sputtered thin films Martil De La Plaza, Ignacio González Díaz, Germán Sánchez Quesada, Francisco Santamaría Sánchez-Barriga, Jacobo Thin films of CuGaSe2 have been produced by rf sputtering. Compositional, structural, electrical, and optical properties are strongly influenced by growthtemperature. At substrate temperatures lower than 300 °C amorphous or poorly crystalline Se‐excess films are obtained, showing high resistivity (≊103 Ω cm) and optical transitions at 1.62, 1.80, and 2.4 eV (values lower than the single‐crystal counterparts). At the higher growthtemperatures,polycrystalline films are obtained (average grain size 0.7 μm) with lower values of resistivity (1 Ω cm), and optical transitions at 1.68, 1.90, and 2.55 eV (very close to the single‐crystal values). A hopping conduction mechanism has been detected at the lower measuringtemperature (T<150 K), and a grain boundary limited conduction process at the higher measurementstemperature (T>150 K). Structural and compositional characteristics are used to explain the behavior observed in the electrical and optical properties. 2023-06-20T19:08:57Z 2023-06-20T19:08:57Z 2023-06-20T19:08:57Z 1990-06-01 journal article https://hdl.handle.net/20.500.14352/59314 0021-8979 10.1063/1.347113 eng CCA-84111046 open access American Institute of Physics