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oai:docta.ucm.es:20.500.14352/593152024-08-27T16:10:44Zcom_20.500.14352_14col_20.500.14352_15

Role of deep levels and interface states in the capacitance characteristics of all‐sputtered CuInSe2/CdS solar cell heterojunctions Martil De La Plaza, Ignacio González Díaz, Germán Sánchez Quesada, Francisco Santamaría Sánchez-Barriga, Jacobo Iborra, E. 537 Physics Applied. Electricidad Electrónica (Física) 2202.03 Electricidad © American Institute of Physics. This work was partially financed by the Spain-USA Joint Committe under Grant No. CCA-8411046. All‐sputtered CuInSe2/CdS solar cellheterojunctions have been analyzed by means of capacitance‐frequency (C‐F) and capacitance‐bias voltage (C‐V) measurements. Depending on the CuInSe2 layer composition, two kinds of heterojunctions were analyzed: type 1 heterojunctions (based on stoichiometric or slightly In‐rich CuInSe2 layers) and type 2 heterojunctions (based on Cu‐rich CuInSe2 layers). In type 1 heterojunctions, a 80‐meV donor level has been found. Densities of interface states in the range 101 0–101 1 cm2 eV− 1 (type 1) and in the range 101 2–101 3 cm− 2 eV− 1 (type 2) have been deduced. On the other hand, doping concentrations of 1.6×101 6 cm− 3 for stoichiometric CuInSe2 (type 1 heterojunction) and 8×101 7 cm− 3 for the CdS (type 2 heterojunction) have been deduced from C‐Vmeasurements. Spain-USA Joint Committe Depto. de Estructura de la Materia, Física Térmica y Electrónica Fac. de Ciencias Físicas TRUE pub 2023-06-20T19:08:59Z 2023-06-20T19:08:59Z 1989-04-15 journal article https://hdl.handle.net/20.500.14352/59315 0021-8979 10.1063/1.342676 eng CCA-8411046 open access application/pdf American Institute of Physics