2026-06-29T07:25:01Zhttps://docta.ucm.es/rest/oai/requestoai:docta.ucm.es:20.500.14352/593432023-08-27T19:52:02Zcom_20.500.14352_14col_20.500.14352_15
Comparison of Raman-scattering and Shubnikov-de Haas measurements to determine charge density in doped semiconductors
González Díaz, Germán
Artús, L.
Blanco, N.
Cuscó, R.
Ibáñez, J.
Long, A.R.
Rahman, M.
537
P-Type GaAs
Carrier Concentration
Plasmon Modes
Phonon Modes
InP
Spectra.
Electricidad
Electrónica (Física)
2202.03 Electricidad
© American Institute of Physics. The authors wish to acknowledge financial support from the Spanish Ministry of Science and Technology.
We have verified the accuracy of free-charge determinations from Raman scattering in doped semiconductors by comparing the results obtained from phonon-plasmon coupled-mode line-shape fits with the charge-density values extracted from the analysis of the Shubnikov-de Haas oscillations. The experiments were carried out on n-InP layers, and conduction band nonparabolicity was included both in the Lindhard-Mermin model used to fit the Raman spectra and in the Shubnikov-de Haas analysis. We find a very good agreement between Raman and magnetotransport results, which confirms the reliability of the charge-density determination from Raman-scattering measurements when the line-shape analysis is carried out using the Lindhard-Mermin model.
Spanish Ministry of Science and Technology
Depto. de Estructura de la Materia, Física Térmica y Electrónica
Fac. de Ciencias Físicas
TRUE
pub
2023-06-20T19:10:13Z
2023-06-20T19:10:13Z
2000-12-01
journal article
https://hdl.handle.net/20.500.14352/59343
0021-8979
10.1063/1.1322593
eng
open access
application/pdf
American Institute of Physics