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oai:docta.ucm.es:20.500.14352/593502024-09-27T14:00:44Zcom_20.500.14352_14col_20.500.14352_15

00925njm 22002777a 4500 dc Gómez, I. author Díez Alcántara, Eduardo author Domínguez-Adame Acosta, Francisco author Orellana, P. A. author 2002-10-15 We present a model based on the two-dimensional transfer matrix formalism to calculate single-electron states in a random wide-gap semiconductor quantum dot superlattice. With a simple disorder model both the random arrangement of quantum dots (configurational disorder) and the spatial inhomogeneities of their shape (morphological disorder) are considered. The model correctly describes channel mixing and broadening of allowed energy bands due to elastic electron scattering by disorder. 0021-8979 10.1063/1.1503393 https://hdl.handle.net/20.500.14352/59350 http://dx.doi.org/10.1063/1.1503393 http://scitation.aip.org/ Transport in random quantum dot superlattices