2026-06-27T12:24:09Zhttps://docta.ucm.es/rest/oai/requestoai:docta.ucm.es:20.500.14352/593522023-08-26T10:11:57Zcom_20.500.14352_14col_20.500.14352_15
Docta Complutense
author
Parisini, A.
author
Tarricone, L.
author
Bellani, V.
author
Parravicini, G. B.
author
Díaz García, Elena
author
Domínguez-Adame Acosta, Francisco
author
Hey, R.
2023-06-20T19:10:38Z
2023-06-20T19:10:38Z
2001-01-15
1098-0121
10.1103/PhysRevB.63.165321
https://hdl.handle.net/20.500.14352/59352
http://dx.doi.org/10.1103/PhysRevB.63.165321
http://journals.aps.org
We report a systematic study of several GaAs-AlxGa1-xAs semiconductor superlattices grown by molecular-beam epitaxy specifically designed to explore the existence of extended states in random dimer superlattices. We have confirmed our previous results [V. Bellani et al., Phys. Rev. Lett. 82, 2159 (1999)] with much additional evidence that allows us to lay claim to a clear-cut experimental verification of the presence of extended states in random dimer superlattices due to the short-range correlations (dimers) that inhibit the localization effects of the disorder.
eng
Electronic structure and vertical transport in random dimer GaAs-Al_xGa_(1-x)As superlattices
journal article
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File
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Dguez-Adame79libre.pdf
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Dguez-Adame79libre.pdf.txt