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oai:docta.ucm.es:20.500.14352/593522023-08-26T10:11:57Zcom_20.500.14352_14col_20.500.14352_15

Electronic structure and vertical transport in random dimer GaAs-Al_xGa_(1-x)As superlattices Parisini, A. Tarricone, L. Bellani, V. Parravicini, G. B. Díaz García, Elena Domínguez-Adame Acosta, Francisco Hey, R. © 2001 The American Physical Society. We are grateful to J. C. Flores, K. Fujiwara, G. Guizzetti, M. Hilke, C. Kanyinda-Malu, A. Stella, and D. Tsui for their enlightening discussions. Work in Italy has been supported by the INFM Network ‘‘Fisica e Tecnologia dei Semiconduttori III-V’’ and in Madrid by DGES under Project MAT2000-0734. We report a systematic study of several GaAs-AlxGa1-xAs semiconductor superlattices grown by molecular-beam epitaxy specifically designed to explore the existence of extended states in random dimer superlattices. We have confirmed our previous results [V. Bellani et al., Phys. Rev. Lett. 82, 2159 (1999)] with much additional evidence that allows us to lay claim to a clear-cut experimental verification of the presence of extended states in random dimer superlattices due to the short-range correlations (dimers) that inhibit the localization effects of the disorder. 2023-06-20T19:10:38Z 2023-06-20T19:10:38Z 2001-01-15 journal article 1098-0121 10.1103/PhysRevB.63.165321 https://hdl.handle.net/20.500.14352/59352 http://dx.doi.org/10.1103/PhysRevB.63.165321 http://journals.aps.org eng MAT2000-0734 open access American Physical Society