2026-06-27T12:38:59Zhttps://docta.ucm.es/rest/oai/request

oai:docta.ucm.es:20.500.14352/594262023-08-27T14:50:54Zcom_20.500.14352_14col_20.500.14352_15

Segovia, P. Castro, G. R. Mascaraque Susunaga, Arantzazu Prieto, P. Kim, H. J. Michel, E. G. 2023-06-20T19:14:20Z 2023-06-20T19:14:20Z 1996-11-15 0163-1829 10.1103/PhysRevB.54.R14277 https://hdl.handle.net/20.500.14352/59426 http://dx.doi.org/10.1103/PhysRevB.54.R14277 http://journals.aps.org The electronic structure and the metallization onset of single-domain K/Si(100)2x1 have been investigated with angle-resolved polarization-sensitive ultraviolet photoemission. The electronic states producing the surface metallization have been studied for increasing K coverages up to room-temperature saturation. As K coverage increases, the interface undergoes a transition at a critical coverage, from a low-coverage semiconducting phase, to a saturation-coverage metallic phase. Two different surface states (F-1 and F-2) have been detected in the vicinity of the Fermi level. These two states are sequentially filled along the metallization process. The coverage dependence of both F-1 and F-2, and their symmetry properties indicate that the metallization is due to the filling of an initially empty surface band (appearance of F-2) We relate F-1 to the completion of K chains in the single-domain surface. The changes detected in K 3p line shape correlate well with the modifications of the valence band, and support that the surface remains semiconducting up to the filling of F-2. eng open access Origin of the surface metallization in single-domain K/Si(100)2x1 journal article